Dual-Gate FET References
Updated 7 March 2003
  1. Anand, K.V., and S.G. Chamberlain, "Novel p-n Junction Polysilicon Dual-Gate MOSFET for Analogue Applications," Proceedings of the IEE, Pt. 2, No. 2, Apr 1982, pp. 58-60.
    
    
  2. Asai, S., F. Murai, and H. Kodera, "GaAs Dual-Gate Schottky-Barrier FET's for Microwave Frequencies," IEEE Transactions on Electron Devices, Vol. ED-22, No. 10, Oct 1975, pp. 897-904.
    
    
  3. Baar, L.S., "RF Applications of the Dual-Gate MOS FET Up to 500 MHz," RCA Application Note AN-4431.
    
    
  4. Barbari, G., "UHF Preamplifier Centers on Budget Dual-Gate FET," Microwaves & RF, Feb 1984, pp. 141-145.
    
    
  5. Chen, T-H. and M. Kumar, "Dual-Gate GaAs FET: A Versatile Circuit Component for MMICs," Microwave Journal, Jun 1989, pp. 125-135.
    
    
  6. Darling, R.B., "Distributed Numerical Modeling of Dual-Gate GaAs MESFET's," IEEE Transactioons on Microwave Theory and Techniques, Vol. 37, No. 9, Sep 1989, pp. 1351-1360.
    
    
  7. Dawson, R., R. Ahrons, and N. Ditrick, "Understanding and Using the Dual-Gate MOSFET," The Electronic Engineer, Sep 1967, pp. 36-39.
    
    
  8. Dawson, R.H., L.A. Jacobus, and R.H. Brader, "MOS Devices for Linear Systems," RCA Engineer, Vol. 17, No. 3, Oct/Nov 1971, pp. 21-27.
    
    
  9. Dawson, R.H. and J.O. Preisig, "MOS Dual-Gate Transistor for UHF Applications," NEREM Record, 1969, pp. 122-123.
    
    
  10. Deng, W-K. and T-H. Chu, "Elements Extraction of GaAs Dial-Gate MESFET Small-Signal Equivalent Circuit," IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 12, Dec 1998, pp. 2383-2390.
    
    
  11. Dreifuss, J., A. Madjar, and A. Bar-Lev, "New Method for the Analysis of Dual-Gate MESFET Mixers," IEE Proceedings, Vol. 134, Pt. H, No. 1, Feb 1987, pp. 11-15.
    
    
  12. Filicori, F., G. Vannani, and V.A. Monaco, "Large-Signal Modelling of Dual-Gate MESFETs," Proceedings of the 23rd European Microwave Conference, 1993, pp. 458-461.
    
    
  13. Fu, M.C. and K. Gupta, "Device and Circuit Modeling for a 3.5- to 6.5-GHz GaAs Monolithic Dual-Gate FET Switch Module," Comsat Technical Review, Vol. 19, No. 1, Spring 1989, pp. 123-143.
    
    
  14. Furutsuka, T., M. Ogawa, and N. Kawamura, "GaAs Dual-Gate MESFET's," IEEE Transactions on Electron Devices, Vol. ED-25, No. 6, Jun 1978, pp. 580-586.
    
    
  15. Hopkins, J., "A Printed Circuit VHF TV Tuner Using Tuning Diodes," Motorola Application Note AN-544.
    
    
  16. Horst, G.A.D., "A Large-Signal Model for Approximation of the I-V Characteristic of Dual-Gate MOSFETs in Circuit Analysing," Proceedings of the 1976 International Symposium on Circuits and Systems, pp. 251-254.
    
    
  17. Kleinman, H.M., "Application of Dual-Gate MOS Flield-Effect Transistors in Practical Radio Receivers," IEEE Transactions on Broadcast and Television Receivers, Jul 1967, pp. 72-81.
    
    
  18. Langrez, D., E. Delos, and G. Salmer, "Accurate Extraction of Dual-Gate Field-Effect Transistor Parasitic Elements," Microwave and Optical Technology Letters, Vol. 9, No. 2, 5 Jun 1995, pp. 91-95.
    
    
  19. Latham, D.C., F.A. Lindholm, and D.J. Hamilton, "Low-Frequency Operation of Four-Terminal Field-Effect Transistors," IEEE Transactions on Electron Devices, Jun 1964, pp. 300-305.
    
    
  20. Licqurish, C., M.J. Howes, and C.M. Snowden, "A New Model for the Dual-Gate MESFET," IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 10, Oct 1989, pp. 1497-1505.
    
    
  21. Miles, R.E. and M.J. Howes, "Large-Signal Equivalent-Circuit Model of a GaAs Dual-Gate MESFET Mixer," IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-33, No. 5, May 1985, pp. 433-436.
    
    
  22. Minasian, R.A., "Modelling DC Characteristics of Dual-Gate GaAs MESFETs," Proceedings of the IEE, Pt. 1, No. 4, Aug 1983, pp. 182-186.
    
    
  23. Mitchell, M.M., R. Dawson, and N.H. Ditrick, "High-Frequency Characteristics of the MOS Tetrode," MEREM Record, 1966, pp. 132-133.
    
    
  24. Neubauer, A., T. Sporkmann, and I. Wolff, "A Simple, Physics Based Dual Gate MESFET Model for CAD Applications in Microwave Frequencies," Proceedings of the 22nd European Microwave Conference, 1992, pp. 807-812.
    
    
  25. Nienhuis, R.J., "A MOS Tetrode for the UHF Band with a Channel 1.5um Long," Philips Technical Review, Vol. 30, No. 7/8/9, 1970, pp. 259-265.
    
    
  26. Okumura, T., "The MOS Tetrode, Philips Technical Review, Vol. 30, No. 5, 1969, pp. 134-141.
    
    
  27. Reich, S., "MOS FET Biasing Techniques, EEE, Sep 1970, pp. 62-68.
    
    
  28. Ronen, R.S. and L. Strauss, "The Silicon-on-Sapphire MOS Tetrode - Some Small-Signal Features, LF to UHF," IEEE Transactions on Electron Devices, Vol. ED-21, No. 1, Jan 1974, pp. 100-109.
    
    
  29. Schoon, M., "A Novel, Bias-Dependent, Small-Signal Model of the Dual-Gate MESFET," IEEE Transactions on Microwave Theory and Techniques, Vol. 42, No. 2, Feb 1994, pp. 212-216.
    
    
  30. Scott, J.R. and R.A. Minasian, "A Simplfied Microwave Model of the GaAs Dual-Gate MESFET," IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-32, No. 3, Mar 1984, pp. 243-247.
    
    
  31. Trout, B., "Small-Signal Design with Dual-Gate MOSFETs," Motorola Application Note AN-478A.
    
    
  32. Tsironis, C. and P. Harrop, "Dual Gate GaAs MESFET Phase Shifter with Gain at 12 GHz," Electronics Letters, Jul 1980.
    
    
  33. Tsironis, C. and R. Meierer, "DC Characteristics Aid Dual- Gate FET Analysis," Microwaves, Jul 1981, pp. 71-73.
    
    
  34. Tsironis, C. and R. Meierer, "Microwave Wide-Band Model of GaAs Dual Gate MESFETs," IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-30, No. 3, Mar 1982, pp. 243-251.
    
    
  35. Tsironis, C., R. Meierer, and R. Stahlmann, "Dual-Gate MESFET Mixers," IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-32, No. 3, Mar 1984.
    
    
  36. Tsironis, C., R. Stahlmann, and F. Ponse, "A Self-Oscillating Dual Gaet MESFET X-Band Mixer with 12dB Conversion," Proceedings of the 9th European Microwave Conference, 1979, pp. 321-325.
    
    
  37. Vilimek, V., "Circuit Arrangement for Compensating the Change in Input Capacitance at a First Gate Electrode of a Dual-Gate MOS Field-Effect Transistor," US Patent #4,264,981, 28 Apr 1981.
    
    
  38. Weaver, S., "TV Design Considerations Using High-Gain Dual-Gate MOSFETs," IEEE Transactions on Broadcast and Television Receivers, Vol. BTR-19, No. 2, May 1973, pp. 87-97.
    
    
  39. Weaver, S., "TV Design Considerations Using High-Gain Dual-Gate MOSFETs," Texas Instruments Application Report CA-173.
    
    
  40. Wern, D.W. and C.T. Shelton, "Advanced UHF Receiver Development," RCA Engineer, Vol. 19, No. 3, Oct/Nov 1973, pp. 75-81.
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