Supplier of single crystal silicon wafers and epitaxial silicon wafers to the semiconductor industry

CZ Grown Single Crystal Silicon Substrate Wafers

• Diameter: 1", 2", 3", 4", 5", 6", 8", 12"
• Dopant: Phosphorous, boron, arsenic, antimony
• Thickness and resistivity to customer requirements

Float Zone Silicon Wafers and Ingots

• Diameter: <2" up to 5"
• Dopant: Phosphorous, boron
• Resistivity: 1 ohmcm to >10,000 ohmcm
• Neutron transmutation doped resistivity: 5 ohmcm to 1000 ohmcm
• Thickness and surface finish to customer requirements

Epitaxial Silicon Wafers

• Diameter: 2" up to 8"
• Epi resistivity: <1 ohmcm up to 150 ohmcm
• Epi thickness: < 1 um up to 150 um
• Structure: N/N+, N-/N/N+, N/P/N+, N/P/P+, P/P+, P-/P/P+,  Epi layer on buried layer substrate

Test Grade and Reclaimed Silicon Wafers

Special Request Silicon Wafers

• Diameter: 1" up to 12"
• Ultra Smooth <6 angstrom.
• Ultra flat wafers. <1um
• Thin wafers. 100um to 200um
• Coated silicon wafers

E-mail:sil1@earthlink.net